Sputtering process

publish：2013-05-11

Sputtering, usually refers to the magnetron sputtering, sputtering method are high-speed temperature of the process requires the vacuum degree of about 1 × 10-3Torr, i.e. 1.3 × 10-3Pa a vacuum inert gas is argon (Ar) and the plastic substrate (anode) and a metal target (cathode) applied between the high voltage DC and the glow discharge (glow discharge) excited electrons generated an inert gas to generate plasma, the plasma of the metal target atoms blasted, deposited on the plastic substrate.
    Principle
    Several tens of electron volts or higher kinetic energy charged particle bombardment of the material surface, so that sputtered into the gas phase, is used to etch and plating.
    Ions incident on a number of atoms sputtered called sputtering yield (Yield) higher sputtering yield faster, with Cu, Au, Ag, etc. up, Ti, Mo, Ta, W, etc. minimum. Usually in the 0.1 to 10 atoms / ions.
    DC glow discharge plasma can (glow discharge) generated at 10-1-10 Pa vacuum, in a high voltage discharge is generated between the poles, positive ions bombard the target while the negatively charged sputtering targets also, but to be plated plated the container.
    Normal glow discharge (glow discharge) and the cathode current density of the material and the shape, the type of gas pressure and so on. Sputtering should be possible to maintain its stability.

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